Abstract EN:

The development of high-resolution image sensors with smaller pixel sizes is facing critical issues, such as optical and electrical crosstalk, dark current and dynamic range. As part of this thesis, we addressed this issue by proposing the integration of MOS capacitor deep trench isolation (CDTI). Our studies focus on the validation of the proposal with the aim of improving performances compared to the state of the art. First, we modeled interface states Si/SiO2 and the charge in the oxide. By TCAD simulations, using our model, we were able to evaluate the main characteristics of a pixel. We have validated this approach by comparison between simulations and measurements on a 1.4μm DTI pixel. Then, we developed manufacturing processes for integrating CDTI and defined the associated key parameters. With TCAD simulations of process type, we could achieve the desired performances while keeping a short development cycle and cost. Finally, we have designed, manufactured and tested a 1.4μm CDTI pixel ; we got a very low dark current: ~ 1 aA/pixel at 60°C, which is 6 times less than the DTI pixel, and doubled saturation charge up to 12000e-. Other performances are comparable between the two types of pixels. We have demonstrated the validity of the proposed CDTI solution CDTI